| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,500 pcs
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10500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVTFS5C460NLTAG, is designed for efficient power management. It offers a drain-to-source voltage (Vdss) of 40V and a maximum continuous drain current of 74A when measured at the case temperature (Tc=25°C), and 19A when measured at ambient temperature (Ta=25°C). The device boasts a low on-resistance (Rds(on)) of 4.8mOhm at 35A and 10V gate-source voltage, minimizing conduction losses.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V at 40µA and a gate-to-source voltage (Vgs) range of ±20V. The input capacitance (Ciss) is 1300pF at 25V, and the gate charge (Qg) is 11nC at 10V, contributing to minimized driver losses. The MOSFET operates within a junction temperature range of -55°C to +175°C.
Packaged in an 8-WDFN (3.3x3.3mm) surface-mount configuration, this component is suitable for compact designs. It features a low footprint, making it ideal for space-constrained applications. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. It is also Pb-Free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 74A when measured at the case temperature (Tc=25°C) and 19A when measured at ambient temperature (Ta=25°C).
The on-resistance (Rds(on)) is a maximum of 4.8mOhm at 35A and 10V.
This MOSFET is supplied in an 8-WDFN (3.3x3.3mm) surface-mount package.
The operating junction temperature range is -55°C to +175°C.
Yes, this device is RoHS3 Compliant.