| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN3033LDM-7 is an N-Channel Enhancement Mode MOSFET designed for low voltage switching applications. With a maximum drain-source voltage of 30V and continuous drain current of 6.9A at 25°C, it offers a typical on-resistance of 25 mΩ at VGS=10V. The device features low gate charge (6.4 nC at VGS=4.5V) and low input capacitance (755 pF), making it suitable for high-efficiency power management circuits. It is housed in a compact SOT-26 surface-mount package, with a maximum power dissipation of 2W. The MOSFET is RoHS compliant and qualified to AEC-Q101 standards for automotive reliability.
30 V.
6.9 A at TA=25°C, 5.8 A at TA=70°C.
25 mΩ typical (36 mΩ max) at VGS=10V, ID=6.9A; 33 mΩ typical (40 mΩ max) at VGS=4.5V, ID=5.0A.
1.0V to 2.1V.
-55°C to 150°C.
SOT-26 surface-mount package.
Yes, RoHS compliant and lead-free by design.