| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
137,505 pcs
|
137505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,500 pcs
|
8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,041 pcs
|
2041 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The CSD18510Q5B is a 40V N-Channel NexFET power MOSFET from Texas Instruments designed to minimize conduction and switching losses in power conversion applications. It delivers a silicon-limited drain current of 300A at 25°C case temperature and a package-limited current of 100A. The device achieves a maximum on-resistance of 0.96mΩ at 10V gate drive and 1.6mΩ at 4.5V gate drive, supporting both standard and logic-level gate voltages.
Key electrical characteristics include a typical gate charge of 118nC, with gate-drain charge of 21nC and gate-source charge of 28nC. Maximum input capacitance is 11400pF at 20V drain-source voltage. The MOSFET is avalanche rated and offers low thermal resistance for efficient heat dissipation. Maximum power dissipation is 156W at case temperature.
The device is housed in a surface-mount 8-PowerTDFN package (5mm x 6mm) with supplier package designation 8-VSON-CLIP. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS compliant, halogen free, and features lead-free terminal plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.04 | $3.04 |
| 10+ | $1.97 | $1.97 |
| 100+ | $1.36 | $1.36 |
| 500+ | $1.10 | $1.10 |
| 1,000+ | $1.05 | $1.05 |
| 2,500+ | $1.02 | $1.02 |
| 10,000+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The silicon-limited drain current is 300A at Tc=25°C, and the package-limited drain current is 100A.
Maximum on-resistance is 0.96mΩ at Id=32A and Vgs=10V, and 1.6mΩ at Vgs=4.5V.
The operating junction temperature range is -55°C to 150°C.
Yes, the CSD18510Q5B is RoHS3 compliant and halogen free with lead-free terminal plating.
It is available in a surface-mount 8-PowerTDFN package (8-VSON-CLIP, 5mm x 6mm).
The typical total gate charge at Vgs=10V is 118nC, with gate-drain charge of 21nC and gate-source charge of 28nC.