IPW65R190CFDFKSA2 Infineon IPW65R190CFDFKSA2 is an N-Channel MOSFET with 650V drain-source voltage, 17.5A drain current, and 190mOhm on-resistance in a TO-247-3 package.
Mfr Part #:

IPW65R190CFDFKSA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPW65R190CFDFKSA2 is an N-Channel MOSFET with 650V drain-source voltage, 17.5A drain current, and 190mOhm on-resistance in a TO-247-3 package.
✓ Total Stock: 10,620 pcs
$ Price Range: $1.80 - $4.70

IPW65R190CFDFKSA2 Available from 1 distributor

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✓ Non-Authorised
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IPW65R190CFDFKSA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPW65R190CFDFKSA2 Description

Short technical summary and product information.

The Infineon IPW65R190CFDFKSA2 is an N-Channel power MOSFET designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 650V and a continuous drain current of 17.5A at case temperature. The device offers a low maximum on-resistance of 190mOhm at 10V gate drive, enabling efficient power conversion.

 

This MOSFET is housed in a through-hole TO-247-3 package (supplier package PG-TO247-3-41) and supports an operating junction temperature range of -55°C to 150°C. With a maximum power dissipation of 151W at case temperature, it is suitable for demanding power electronics designs.

 

The part includes a maximum gate charge of 68nC at 10V and an input capacitance of 1850pF at 100V drain-source voltage, providing predictable switching behavior. The gate threshold voltage is 4.5V at 700µA drain current, and the maximum gate-source voltage rating is ±20V.

IPW65R190CFDFKSA2 Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies IPW65R190CFDFKSA2 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IPW65R190CFDFKSA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW65R190CFDFKSA2 Estimated Pricing

Qty Low High
1+ $4.70 $4.70
30+ $2.60 $2.60
60+ $2.35 $2.35
120+ $2.14 $2.14
510+ $1.80 $1.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW65R190CFDFKSA2 Features

  • 650V maximum drain-to-source voltage rating.
  • 17.5A continuous drain current at case temperature.
  • 190mOhm maximum on-resistance at 10V gate drive.
  • Through-hole TO-247-3 package for robust mounting.
  • Wide operating temperature range from -55°C to 150°C.

IPW65R190CFDFKSA2 Applications

  • High-voltage DC-DC converter circuits.
  • Switching power supply designs.
  • Power factor correction stages.
  • Motor drive and inverter applications.

IPW65R190CFDFKSA2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPW65R190CFDFKSA2?

The maximum drain-source voltage is 650V.

What is the maximum drain current rating?

The maximum drain current is 17.5A at case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 190mOhm at 7.3A drain current and 10V gate-source voltage.

What package does the IPW65R190CFDFKSA2 come in?

It comes in a through-hole TO-247-3 package (supplier device package PG-TO247-3-41).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IPW65R190CFDFKSA2 RoHS compliant?

The part is listed as RoHS3 compliant, but this information is unverified.

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