Vishay Dale

<p>The Vishay SI4532CDY-T1-GE3 is a versatile MOSFET featuring both N-channel and P-channel configurations, designed for 30V drain-source voltage applications. It offers a continuous drain current of up to 6A for the N-channel and 4.3A for the P-channel at 25°C case temperature.</p><p>&nbsp;</p><p>Key electrical characteristics include a low on-resistance of 0.047 Ohms at 10V gate-source voltage for the N-channel and 0.089 Ohms at -10V for the P-channel. The device has a gate charge of 9 nC (max) and an input capacitance of 305 pF (max).</p><p>&nbsp;</p><p>With a power dissipation of 2.78W at 25°C case temperature, this MOSFET is suitable for various power management tasks. It operates within a temperature range of -55°C to 150°C.</p><p>&nbsp;</p><p>The SI4532CDY-T1-GE3 is housed in an 8-SOIC package and is designed for surface mount applications. It is compliant with RoHS and Halogen-free standards, making it suitable for environmentally conscious designs.</p>