SI4900DY-T1-E3 The Vishay Dale SI4900DY-T1-E3 is a dual N-channel MOSFET designed for 60V applications. It offers a continuous drain current of 5.3A and is housed in an 8-SOIC package.
Mfr Part #:

SI4900DY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4900DY-T1-E3 is a dual N-channel MOSFET designed for 60V applications. It offers a continuous drain current of 5.3A and is housed in an 8-SOIC package.
✓ Total Stock: 362,357 pcs
$ Price Range: $0.99

SI4900DY-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
361,600 pcs
361600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
757 pcs
757 pcs On Request 1 On Request On Request 17+ On Request On Request

SI4900DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI4900DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4900DY-T1-E3 is a dual N-channel MOSFET with a 60V drain-source breakdown voltage. It is designed for applications requiring efficient power switching and features a low on-state resistance of 58mOhm at 4.3A and 10V Vgs.

 

This MOSFET is suitable for applications requiring a continuous drain current of up to 5.3A at 25°C case temperature. It operates within a junction and storage temperature range of -55°C to 150°C. The device is available in an 8-SOIC package, suitable for surface mounting.

 

Key electrical characteristics include an input capacitance of 665pF at 15V and 1MHz, and a gate charge of 13nC typical at 10V Vgs. The device also features a logic level gate, making it compatible with lower gate drive voltages.

 

This component is halogen-free and compliant with RoHS3 standards. Its thermal resistance is rated at 62.5°C/W maximum junction-to-ambient.

SI4900DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 60-V MOSFET
Subcategory: Arrays

SI4900DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4900DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4900DY-T1-E3 Features

  • Dual N-Channel 60V MOSFET
  • 5.3A continuous drain current
  • Low Rds On: 58mOhm at 4.3A, 10V
  • Logic Level Gate compatible
  • 8-SOIC surface mount package

SI4900DY-T1-E3 Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for power management in portable devices.
  • Used in motor control driver stages.

SI4900DY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the SI4900DY-T1-E3?

The maximum continuous drain current is 5.3A at a case temperature of 25°C.

What is the Rds On for the SI4900DY-T1-E3?

The Rds On is a maximum of 0.046 Ohms at 4.3A and 10V Vgs, and a typical of 0.058 Ohms at 4.3A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4900DY-T1-E3 available in?

It is available in an 8-SOIC package.

Is the SI4900DY-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI4900DY-T1-E3 halogen-free?

Yes, it is halogen-free.

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