SI2308DS-T1-E3 The Vishay Dale SI2308DS-T1-E3 is an N-Channel MOSFET designed for 60V applications. It features a low Rds On of 160mOhm at 10V gate drive and a continuous current rating of 2A.
Mfr Part #:

SI2308DS-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2308DS-T1-E3 is an N-Channel MOSFET designed for 60V applications. It features a low Rds On of 160mOhm at 10V gate drive and a continuous current rating of 2A.
✓ Total Stock: 362,376 pcs
$ Price Range: $0.99

SI2308DS-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
361,600 pcs
361600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
776 pcs
776 pcs On Request 1 On Request On Request 07+ On Request On Request

SI2308DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2308DS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2308DS-T1-E3 is an N-Channel MOSFET with a drain-source voltage rating of 60V. This component is suitable for various applications requiring efficient switching and power control.

 

Key electrical characteristics include a maximum drain-source on-state resistance of 160mOhm at a gate-source voltage of 10V and a continuous drain current of 2A at 25°C ambient temperature. The gate threshold voltage is typically 3V at 250µA, and the maximum gate-source voltage is ±20V.

 

This MOSFET is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs. It operates within a temperature range of -55°C to 150°C. The device is also noted as being halogen-free according to IEC 61249-2-21 standards.

SI2308DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Si2308DS N-Channel 60V MOSFET
Subcategory: N-Channel

SI2308DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2308DS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2308DS-T1-E3 Features

  • N-Channel 60V Power MOSFET.
  • Low Rds On: 160mOhm at 10V.
  • 2A continuous drain current.
  • Compact SOT-23-3 package.
  • Halogen-free construction.

SI2308DS-T1-E3 Applications

  • Power management for portable devices.
  • DC-DC converter load switching.
  • Battery protection and charging circuits.
  • Low-voltage motor driver applications.
  • General purpose low-power load switching.

SI2308DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI2308DS-T1-E3?

60V minimum.

What is the maximum continuous drain current?

2A at 25°C ambient.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

SOT-23-3 (TO-236) surface mount package.

What is the maximum on-resistance?

160 milliohms at VGS=10V and ID=2A.

What is the gate threshold voltage?

3V maximum at VDS=VGS, ID=250µA.

What is the total gate charge?

10 nC at VDS=30V, VGS=10V, ID=2A.

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