| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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298,520 pcs
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298520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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90,400 pcs
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90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,977 pcs
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4977 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
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1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
375 pcs
|
375 pcs | On Request | 1 | On Request | On Request | 1970-01-01 00:28:49 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Id) | |
| Continuous Drain Current (TA = 25 °C) | |
| Continuous Drain Current (TA = 70 °C) | |
| Continuous Drain Current (TC = 25 °C) | |
| Continuous Drain Current (TC = 70 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drain-Source Breakdown Voltage Temperature Coefficient | |
| Gate Charge (Qg) (Max) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Body Leakage | |
| Gate-Source Threshold Voltage | |
| Gate-Source Threshold Voltage (Vgs(th)) | |
| Gate-Source Threshold Voltage Temperature Coefficient | |
| Gate-Source Voltage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Maximum Junction-to-Ambient Thermal Resistance | |
| Maximum Junction-to-Foot (Drain) Thermal Resistance | |
| Maximum Power Dissipation (TA = 25 °C) | |
| Maximum Power Dissipation (TA = 70 °C) | |
| Maximum Power Dissipation (TC = 25 °C) | |
| Maximum Power Dissipation (TC = 70 °C) | |
| Mounting Type | |
| On-Resistance (Rds On) (Max) | |
| Operating Junction and Storage Temperature Range | |
| Operating Temperature | |
| Power | |
| Power Dissipation (PD) | |
| Pulsed Drain Current | |
| Pulsed Source-Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Avalanche Current | |
| Single Pulse Avalanche Energy | |
| Source-Drain Current Diode Current (TA = 25 °C) | |
| Source-Drain Current Diode Current (TC = 25 °C) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current |
The Vishay SI4532CDY-T1-GE3 is a versatile MOSFET featuring both N-channel and P-channel configurations, designed for 30V drain-source voltage applications. It offers a continuous drain current of up to 6A for the N-channel and 4.3A for the P-channel at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 0.047 Ohms at 10V gate-source voltage for the N-channel and 0.089 Ohms at -10V for the P-channel. The device has a gate charge of 9 nC (max) and an input capacitance of 305 pF (max).
With a power dissipation of 2.78W at 25°C case temperature, this MOSFET is suitable for various power management tasks. It operates within a temperature range of -55°C to 150°C.
The SI4532CDY-T1-GE3 is housed in an 8-SOIC package and is designed for surface mount applications. It is compliant with RoHS and Halogen-free standards, making it suitable for environmentally conscious designs.
The operating junction and storage temperature range is -55°C to 150°C.
The SI4532CDY-T1-GE3 is available in an 8-SOIC package for surface mounting.
Yes, the SI4532CDY-T1-GE3 is RoHS3 compliant.
The maximum continuous drain current for the N-channel configuration is 6A at 25°C case temperature.
The maximum drain-source voltage is 30V.
The typical gate charge (Qg) is 2.75 nC for the N-channel configuration.
The maximum on-resistance (Rds On) for the N-channel at 10V Vgs is 0.047 Ohms.