SI4532CDY-T1-GE3 The Vishay SI4532CDY-T1-GE3 is an N/P-Channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It comes in an 8-SOIC package.
Mfr Part #:

SI4532CDY-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay SI4532CDY-T1-GE3 is an N/P-Channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It comes in an 8-SOIC package.
✓ Total Stock: 395,752 pcs

SI4532CDY-T1-GE3 Available from 5 distributors

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SI4532CDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI4532CDY-T1-GE3 Description

Short technical summary and product information.

The Vishay SI4532CDY-T1-GE3 is a versatile MOSFET featuring both N-channel and P-channel configurations, designed for 30V drain-source voltage applications. It offers a continuous drain current of up to 6A for the N-channel and 4.3A for the P-channel at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 0.047 Ohms at 10V gate-source voltage for the N-channel and 0.089 Ohms at -10V for the P-channel. The device has a gate charge of 9 nC (max) and an input capacitance of 305 pF (max).

 

With a power dissipation of 2.78W at 25°C case temperature, this MOSFET is suitable for various power management tasks. It operates within a temperature range of -55°C to 150°C.

 

The SI4532CDY-T1-GE3 is housed in an 8-SOIC package and is designed for surface mount applications. It is compliant with RoHS and Halogen-free standards, making it suitable for environmentally conscious designs.

SI4532CDY-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: N- and P-Channel 30 V (D-S) MOSFET
Subcategory: Arrays

SI4532CDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4532CDY-T1-GE3 Features

  • N- and P-Channel MOSFET configuration.
  • 30V drain-source breakdown voltage.
  • Low on-resistance for efficient switching.
  • Surface mount 8-SOIC package.
  • RoHS and Halogen-free compliant.

SI4532CDY-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Used in load switch applications.
  • Ideal for power management tasks.
  • Designed for general purpose switching.

SI4532CDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the SI4532CDY-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4532CDY-T1-GE3 available in?

The SI4532CDY-T1-GE3 is available in an 8-SOIC package for surface mounting.

Is the SI4532CDY-T1-GE3 RoHS compliant?

Yes, the SI4532CDY-T1-GE3 is RoHS3 compliant.

What is the maximum continuous drain current for the N-channel configuration?

The maximum continuous drain current for the N-channel configuration is 6A at 25°C case temperature.

What is the maximum drain-source voltage?

The maximum drain-source voltage is 30V.

What is the typical gate charge (Qg) for this MOSFET?

The typical gate charge (Qg) is 2.75 nC for the N-channel configuration.

What is the maximum on-resistance (Rds On) for the N-channel at 10V Vgs?

The maximum on-resistance (Rds On) for the N-channel at 10V Vgs is 0.047 Ohms.

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