| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI2367DS-T1-GE3 is a P-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 3.8A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 66mOhm at a gate-source voltage (Vgs) of -4.5V and a drain current (Id) of -2.5A.
The MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The typical gate charge (Qg) is 9nC at Vgs = -8V.
Key electrical characteristics include a gate-source voltage (Vgs) of ±8V and a gate-source threshold voltage (Vgs(th)) of 1V at 250µA. The maximum power dissipation is 960mW when mounted on a 1" x 1" FR4 board (Ta = 25°C).
Applications for this MOSFET include load switching for portable devices and DC/DC converters. It is manufactured using TrenchFET technology and is 100% Rg tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V minimum at VGS = 0V and ID = -250µA.
The continuous drain current is -3.8A maximum at a case temperature of 25°C.
The on-resistance is 66mOhm maximum at ID = -2.5A and VGS = -4.5V. It is also specified as 86mOhm at VGS = -2.5V and 130mOhm at VGS = -1.8V.
The gate threshold voltage is 1V maximum at ID = -250µA.
The operating junction temperature range is -55°C to 150°C.
It is available in a SOT23-3 (TO-236) surface mount package.
Maximum power dissipation is 960mW at 25°C ambient and 1.7W at 25°C case temperature.