Vishay Dale

<p>The Vishay SI2318CDS-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum Drain to Source Voltage (Vdss) of 40V and a Continuous Drain Current (Id) of 5.6A (Tc). The On-Resistance (Rds On) is rated at 42mOhm at 4.3A and 10V.</p><p>&nbsp;</p><p>This MOSFET has a Gate to Source Voltage (Vgs) of ±20V and a Gate Threshold Voltage (Vgs(th)) of 2.5V @ 250µA. Key electrical parameters include an Input Capacitance (Ciss) of 340 pF @ 20V and a Gate Charge (Qg) of 9 nC @ 10V. The drive voltage for achieving maximum and minimum Rds On is 4.5V and 10V, respectively.</p><p>&nbsp;</p><p>With a maximum power dissipation of 1.25W (Ta) or 2.1W (Tc), and an operating temperature range of -55°C to 150°C (TJ), this component is suitable for demanding environments. It is constructed using MOSFET technology.</p><p>&nbsp;</p><p>The SI2318CDS-T1-GE3 is supplied in a Surface Mountable SOT-23-3 (TO-236) package, making it suitable for compact PCB designs.</p>