SI4948DY-T1-E3 The Vishay Dale SI4948DY-T1-E3 is a dual P-Channel MOSFET with a 60V drain-source voltage rating and a continuous drain current of 2.4A. It features a logic level gate and a maximum on-resistance of 120 mOhm.
Mfr Part #:

SI4948DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4948DY-T1-E3 is a dual P-Channel MOSFET with a 60V drain-source voltage rating and a continuous drain current of 2.4A. It features a logic level gate and a maximum on-resistance of 120 mOhm.
Total Stock: 516,571 pcs
$ Price Range: $1.64

SI4948DY-T1-E3 Available from 1 distributor

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SI4948DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Tape & Reel
Vgs(th) (Max) @ Id

SI4948DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4948DY-T1-E3 is a dual P-Channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 2.4A at 25°C. The MOSFET has a logic level gate feature, making it suitable for low-voltage control applications.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 120 mOhm at 3.1A and 10V, and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The maximum gate charge (Qg) is 22nC at 10V. The component has a maximum power dissipation of 1.4W.

 

This MOSFET is housed in an 8-SOIC package with a surface mount type. The operating temperature range is from -55°C to 175°C (TJ). The part is supplied in Tape & Reel packaging.

SI4948DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4948DY-T1-E3 Dual P-Channel MOSFET
Subcategory: Dual P-Channel

SI4948DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4948DY-T1-E3 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4948DY-T1-E3 Features

  • Dual P-Channel MOSFET configuration.
  • 60V maximum drain-source voltage.
  • 2.4A continuous drain current.
  • Logic level gate for low-voltage control.
  • Surface mount 8-SOIC package.

SI4948DY-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for low-voltage control applications.
  • Used in battery management systems.
  • Applicable in load switch designs.

SI4948DY-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4948DY-T1-E3?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current of the SI4948DY-T1-E3 at 25°C?

The continuous drain current (Id) at 25°C is 2.4A.

What is the maximum on-resistance for the SI4948DY-T1-E3?

The maximum on-resistance (Rds On) is 120 mOhm at 3.1A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What type of package is the SI4948DY-T1-E3 in?

It is in an 8-SOIC package designed for surface mounting.

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