| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4500BDY-T1-E3 from Vishay Dale is a MOSFET array comprising N and P-channel transistors, suitable for various electronic applications. This component offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current rating of 6.6A for the N-channel and 3.8A for the P-channel. The on-resistance (Rds On) is specified as a maximum of 20mOhm at 9.1A and 4.5V.
Designed with a logic level gate feature, it operates efficiently with lower gate voltages. The device has a maximum power dissipation of 1.3W and a gate charge (Qg) of 17nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA.
This MOSFET array is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, measuring 0.154 inches with a 3.90mm width. It is designed for surface mounting, making it suitable for integration into compact circuit designs. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
Surface mount 8-SOIC (0.154", 3.90mm Width).
6.6A for the N-Channel and 3.8A for the P-Channel.
20mOhm at Vgs=4.5V, Id=9.1A.
Yes, it features a logic level gate for low voltage drive.
17nC at Vgs=4.5V.
N and P-Channel, common drain.