SI4542DY-T1-E3 The Vishay Dale SI4542DY-T1-E3 is an N and P-Channel MOSFET with a 30V drain-source voltage. It features a low Rds On of 25mOhm at 6.9A and 10V.
Mfr Part #:

SI4542DY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4542DY-T1-E3 is an N and P-Channel MOSFET with a 30V drain-source voltage. It features a low Rds On of 25mOhm at 6.9A and 10V.
✓ Total Stock: 507,839 pcs
$ Price Range: $0.99

SI4542DY-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
475,789 pcs
475789 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
32,050 pcs
32050 pcs On Request 1 On Request On Request On Request On Request On Request

SI4542DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI4542DY-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI4542DY-T1-E3 is an N and P-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage of 30V and a maximum on-resistance of 25mOhm at 6.9A and 10V.

 

The MOSFET has a gate charge of 50nC at 10V and a gate threshold voltage of 1V at 250µA. It is rated for a power dissipation of 2W and operates within a temperature range of -55°C to 150°C.

 

The component is housed in an 8-SOIC package with a width of 0.154 inches (3.90mm). Its technology is based on MOSFET (Metal Oxide) with a logic level gate feature. The RoHS status is compliant, and it has a moisture sensitivity level of 1.

 

This part is suitable for various electronic designs requiring efficient switching and power management. Its surface mount capability allows for integration into compact circuit boards.

SI4542DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4542DY-T1-E3 N and P-Channel MOSFET
Subcategory: Arrays

SI4542DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4542DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4542DY-T1-E3 Features

  • N and P-Channel MOSFET configuration.
  • 30V maximum drain-source voltage.
  • Low 25mOhm Rds On at 6.9A, 10V.
  • Logic level gate feature included.
  • Surface mount 8-SOIC package.

SI4542DY-T1-E3 Applications

  • Used in power management and load switching.
  • Suitable for DC-DC converter circuits.
  • Ideal for battery protection applications.
  • Can be used in motor control circuits.
  • Applicable in portable electronics.

SI4542DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V.

What package is this MOSFET available in?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C.

What is the on-resistance?

25mOhm at 6.9A, 10V.

What is the gate threshold voltage?

1V maximum at 250µA.

Is this a logic level gate MOSFET?

Yes, it features a logic level gate.

What is the configuration?

N and P-Channel.

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