SI2300DS-T1-GE3 The Vishay Siliconix SI2300DS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 3.6A. It is housed in a compact SOT-23 package.
Mfr Part #:

SI2300DS-T1-GE3

Available from 8 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI2300DS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 3.6A. It is housed in a compact SOT-23 package.
✓ Total Stock: 504,192 pcs
$ Price Range: $0.99

SI2300DS-T1-GE3 Available from 8 distributors

✓ Authorised
✓ Non-Authorised

SI2300DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2300DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SI2300DS-T1-GE3 is a single N-Channel power MOSFET designed for applications requiring efficient switching and power management. It features a 30V drain-source voltage (Vds) and a maximum continuous drain current of 3.6A at 25°C case temperature.

 

This MOSFET offers a low on-resistance, with a maximum of 68mOhm at 4.5V gate-source voltage. The gate-source voltage range is ±12V, and the gate threshold voltage is 1.5V maximum at 250µA. Key electrical parameters include an input capacitance of 320pF at 15V and a gate charge of 10nC at 10V.

 

Designed for surface mounting, the SI2300DS-T1-GE3 comes in a SOT-23-3 (TO-236-3) package. It operates within a temperature range of -55°C to 150°C. The device is suitable for DC/DC converters in portable devices and load switching applications.

 

This component is lead (Pb)-free and halogen-free, adhering to modern environmental standards. Its thermal characteristics include a maximum junction-to-ambient thermal resistance of 115°C/W and a maximum junction-to-foot thermal resistance of 75°C/W.

SI2300DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SI2300DS N-Channel 30V MOSFET
Subcategory: N-Channel

SI2300DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2300DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2300DS-T1-GE3 Features

  • N-Channel 30V power MOSFET.
  • 3.6A continuous drain current.
  • Low on-resistance.
  • SOT-23-3 surface mount package.
  • Lead and halogen-free construction.

SI2300DS-T1-GE3 Applications

  • DC/DC converters for portable devices.
  • Load switching applications.
  • Power management circuits.
  • Compact electronic designs.

SI2300DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI2300DS-T1-GE3?

30V.

What is the package type of this MOSFET?

SOT-23-3.

What is the operating temperature range?

-55°C to 150°C.

What is the maximum gate threshold voltage?

1.5V at 250µA drain current.

What is the on-resistance at VGS=4.5V?

68mOhm maximum at ID=2.9A.

What is the typical gate charge?

10nC maximum at VGS=10V.

What is the continuous drain current at case temperature 25°C?

3.6A.

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