| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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516,571 pcs
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516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Vishay Dale SQ4937EY is a P-Channel Vertical DMOS MOSFET suitable for both linear and switching applications. This component is optimized for performance across a wide temperature range, from -55°C to +125°C.
Key electrical characteristics include a typical Gate Threshold Voltage of 1.9V and a Drain-Source On-State Resistance as low as 0.056Ω at a gate-source voltage of -10V and a drain current of -3.9A. The device also offers a typical Forward Transconductance of 6S and a Diode Forward Voltage of -0.85V.
Dynamic characteristics are also well-defined, with Input Capacitance (Ciss) at 385pF, Output Capacitance (Coss) at 80pF, and Reverse Transfer Capacitance (Crss) at 52pF, all measured at 1MHz. The Total Gate Charge (Qg) is 89.5nC under specified test conditions.
This SPICE device model is intended as a guideline for designers. Designers should refer to the appropriate commercial product datasheet for guaranteed specification limits. The device has a Drain-Source Breakdown Voltage of 30V and an operating temperature up to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical Gate Threshold Voltage (VGS(th)) for the SQ4937EY is 1.9V.
The typical Drain-Source On-State Resistance (Rds(on)) at VGS = -10V and ID = -3.9A is 0.056Ω.
The typical Input Capacitance (Ciss) is 385pF, measured at VDS = -25V, VGS = 0V, and f = 1MHz.
The maximum operating temperature for the SQ4937EY is 175°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.