| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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18,520 pcs
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18520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,088 pcs
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6088 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,088 pcs
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6088 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
333 pcs
|
333 pcs | On Request | 1 | On Request | On Request | 1241+ | On Request | On Request | |
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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4842BDY-T1-E3 is an N-Channel MOSFET from the Metal Oxide Semiconductor technology family. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 28A (Tc). The MOSFET features a low on-resistance (Rds On) of 4.2mOhm maximum at 20A and 10V Vgs, with a gate threshold voltage of 3V at 250µA.
Designed for surface mounting, this component comes in an 8-SOIC package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance of 3650 pF at 15V and a gate charge of 100 nC at 10V. The maximum gate-source voltage is ±20V.
This MOSFET is suitable for various power switching applications where efficient current handling and low on-resistance are critical. Its robust construction and specified parameters make it a reliable choice for designs requiring a 30V N-channel MOSFET in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
28A at case temperature (Tc)
8-SOIC (0.154", 3.90mm Width), surface mount.
-55°C to +150°C (junction temperature).
4.2mOhm at 20A drain current and 10V gate drive.
4.5V and 10V.
3V at 250µA drain current.