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Si4134DY The Vishay Si4134DY is an N-Channel MOSFET designed for DC/DC conversion applications. It features a 30V drain-source breakdown voltage and low on-resistance.
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Si4134DY

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Si4134DY is an N-Channel MOSFET designed for DC/DC conversion applications. It features a 30V drain-source breakdown voltage and low on-resistance.
✓ Total Stock: 516,571 pcs
$ Price Range: $1.64

Si4134DY Available from 1 distributor

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✓ Non-Authorised
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Romaks Technologies ✓
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516,571 pcs
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516571 pcs On Request 1 On Request On Request On Request On Request On Request
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Si4134DY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Si4134DY Description

Short technical summary and product information.

The Vishay Si4134DY is an N-Channel power MOSFET featuring TrenchFET technology. It is designed for DC/DC conversion applications, including notebook system power.

 

Key electrical specifications include a drain-source breakdown voltage of 30V. The on-resistance (Rds(on)) is as low as 0.014 Ohms at a gate-source voltage of 10V and a drain current of 14A. The continuous drain current is rated at 14A at 25°C case temperature.

 

This MOSFET is housed in an SO-8 package and is suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C. The device is tested for 100% Rg and UIS.

 

Applications include DC/DC converters and notebook system power.

Si4134DY Quick Information

Product Type: MOSFET
Canonical Name: Si4134DY N-Channel MOSFET
Subcategory: N-Channel

Si4134DY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

Si4134DY Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

Si4134DY Features

  • N-Channel TrenchFET power MOSFET.
  • 30V Drain-Source Breakdown Voltage.
  • Low Rds(on) down to 0.014 Ohms.
  • 14A Continuous Drain Current.
  • SO-8 package for surface mounting.

Si4134DY Applications

  • Used in notebook system power DC/DC conversion.
  • Suitable for high-efficiency power management circuits.
  • Ideal for load switching and power distribution.
  • Designed for battery-powered portable electronics.
  • Used in point-of-load (POL) converter designs.

Si4134DY FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the Si4134DY?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current for the Si4134DY at 25°C case temperature?

The maximum continuous drain current is 14A.

What is the Rds(on) of the Si4134DY at Vgs = 10V?

The Rds(on) is 0.014 Ohms at Vgs = 10V and Id = 14A.

What is the operating temperature range for the Si4134DY?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the Si4134DY available in?

The Si4134DY is available in an SO-8 package.

What is the RoHS status of the Si4134DY?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the Si4134DY?

The Moisture Sensitivity Level is 1 Unlimited.

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