| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500,000 pcs
|
500000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay Siliconix Si4916DY is a versatile Dual N-Channel MOSFET designed for power management applications. It integrates a Schottky diode for enhanced performance and includes two N-channel MOSFETs within a single SO-8 package.
Key electrical characteristics include a 30V drain-source breakdown voltage and low on-state resistance (Rds(on)) as low as 0.018 Ω at VGS = 10V. The device is rated for continuous drain currents up to 10.5A and features a gate-source voltage range of ±20V.
This MOSFET is suitable for applications such as DC/DC converters and notebook power supplies. Its compact SO-8 package and surface-mount capability make it ideal for space-constrained designs. The device also offers features like 100% R_g tested and is available in halogen-free options.
Absolute maximum ratings include a continuous drain current of up to 10.5A and pulsed drain current up to 40A. The operating junction and storage temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) for the Si4916DY is 30V.
The typical gate threshold voltage (Vgs(th)) for the Si4916DY is 1.5V.
The typical on-state resistance (Rds(on)) for the Si4916DY is 0.018 Ω at VGS = 10V and ID = 10A for Channel-1, and 0.018 Ω at VGS = 10V and ID = 10.5A for Channel-2.
The Si4916DY is available in an SO-8 package.
The operating junction and storage temperature range for the Si4916DY is -55°C to 150°C.
The Si4916DY is listed as RoHS3 Compliant.
Yes, the Si4916DY is available in a halogen-free version.
