SI1013R-T1-E3 The Vishay Dale SI1013R-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 350mA continuous drain current. It is supplied in an SC-75A surface mount package.
Mfr Part #:

SI1013R-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1013R-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 350mA continuous drain current. It is supplied in an SC-75A surface mount package.
✓ Total Stock: 516,571 pcs
$ Price Range: $0.99

SI1013R-T1-E3 Available from 1 distributor

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SI1013R-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1013R-T1-E3 Description

Short technical summary and product information.

The SI1013R-T1-E3 from Vishay Dale is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 350mA at an ambient temperature (Ta).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 1.2 Ohm at 350mA and 4.5V Vgs, and a gate threshold voltage (Vgs(th)) of 450mV minimum at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET is packaged in an SC-75A (SOT-416) surface mount case, making it suitable for compact designs. It also offers features such as low input capacitance and fast switching speeds, as indicated by fetched manufacturer data.

 

Applications for this component include direct logic-level interfaces for TTL/CMOS, drivers for relays, solenoids, lamps, and other devices, as well as battery-operated systems and solid-state relays.

SI1013R-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20V 350mA MOSFET
Subcategory: P-Channel

SI1013R-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1013R-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1013R-T1-E3 Features

  • P-Channel 20V 350mA MOSFET
  • SC-75A surface mount package
  • Maximum Rds On 1.2 Ohm
  • Low input capacitance
  • Fast switching speed

SI1013R-T1-E3 Applications

  • Direct logic-level interface
  • Driver for relays and solenoids
  • Suitable for battery systems
  • Used in solid state relays

SI1013R-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI1013R-T1-E3?

The drain-source voltage rating is 20V.

What is the package type of the SI1013R-T1-E3?

The package is SC-75A, also known as SC-75 or SOT-416.

What is the operating temperature range of the SI1013R-T1-E3?

The operating temperature range is -55°C to 150°C.

What is the continuous drain current of the SI1013R-T1-E3?

The continuous drain current is 350mA at ambient temperature.

What is the on-resistance of the SI1013R-T1-E3?

The maximum on-resistance is 1.2 Ohms at 350mA and 4.5V gate drive.

What is the gate threshold voltage of the SI1013R-T1-E3?

The minimum gate threshold voltage is 450mV at 250µA drain current.

What is the gate charge of the SI1013R-T1-E3?

The maximum gate charge is 1.5 nC at 4.5V gate-source voltage.

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