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SI3127DV-T1-GE3 The SI3127DV-T1-GE3 is a P-Channel MOSFET from Vishay Dale with a 60V drain-source voltage. It features a surface mount SOT-23-6 Thin package.
Mfr Part #:

SI3127DV-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The SI3127DV-T1-GE3 is a P-Channel MOSFET from Vishay Dale with a 60V drain-source voltage. It features a surface mount SOT-23-6 Thin package.
✓ Total Stock: 504,020 pcs
$ Price Range: $0.99

SI3127DV-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
351,000 pcs
On Request
351000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Optech Co.,Limited ✓
Non-Authorised Inventory information
151,020 pcs
On Request
151020 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI3127DV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SI3127DV-T1-GE3 Description

Short technical summary and product information.

The SI3127DV-T1-GE3 is a P-Channel MOSFET manufactured by Vishay Dale, designed for various electronic applications. It operates with a drain-to-source voltage of 60V and can handle continuous drain currents of 3.5A (at Ta) and 13A (at Tc). The MOSFET type is P-Channel, utilizing Metal Oxide technology.

 

This component is housed in a SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting. Key electrical characteristics include a maximum gate-source voltage of ±20V and a gate threshold voltage of 3V at 250µA. The on-resistance is a maximum of 89mOhm at 1.5A and 4.5V. It operates within a temperature range of -55°C to 150°C (TJ).

 

The SI3127DV-T1-GE3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. Its compact size and surface mount capability make it suitable for integration into space-constrained designs.

SI3127DV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI3127DV-T1-GE3 P-Channel MOSFET
Subcategory: Single

SI3127DV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3127DV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3127DV-T1-GE3 Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • Handles 3.5A (Ta) and 13A (Tc) current.
  • Low on-resistance of 89mOhm maximum.
  • Surface mount SOT-23-6 Thin package.
  • RoHS3 compliant for environmental standards.

SI3127DV-T1-GE3 Applications

  • Ideal for power switching applications.
  • Suitable for battery management circuits.
  • Used in load switch designs.
  • Applicable in low-side switching.
  • General purpose P-channel MOSFET use.

SI3127DV-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI3127DV-T1-GE3?

The drain-to-source voltage (Vdss) for the SI3127DV-T1-GE3 is 60V.

What package type is the SI3127DV-T1-GE3 MOSFET?

The SI3127DV-T1-GE3 is available in a SOT-23-6 Thin, TSOT-23-6 package.

What is the operating temperature range for this MOSFET?

The operating temperature range for the SI3127DV-T1-GE3 is -55°C to 150°C (TJ).

Is the SI3127DV-T1-GE3 RoHS compliant?

Yes, the SI3127DV-T1-GE3 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the SI3127DV-T1-GE3?

The Moisture Sensitivity Level (MSL) for the SI3127DV-T1-GE3 is 1.

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