SI1308EDL-T1-GE3 The Vishay Dale SI1308EDL-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 1.4A continuous drain current. It is supplied in a compact SC-70-3 package.
Mfr Part #:

SI1308EDL-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1308EDL-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 1.4A continuous drain current. It is supplied in a compact SC-70-3 package.
✓ Total Stock: 510,587 pcs
$ Price Range: $0.99

SI1308EDL-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI1308EDL-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1308EDL-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1308EDL-T1-GE3 is an N-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 1.4A at 25°C case temperature. The Rds(on) is specified at a maximum of 132mOhm at 1.4A and 10V gate-source voltage.

 

This MOSFET utilizes TrenchFET technology and is suitable for applications such as DC/DC converters, boost converters, and load switches. It operates within a temperature range of -55°C to 150°C and is packaged in an SC-70-3 (SOT-323) surface-mount case.

 

The device offers typical ESD performance of 1800V and is RoHS and Halogen-free compliant. Its compact size and electrical characteristics make it a versatile component for space-constrained designs.

SI1308EDL-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si1308edl
Canonical Name: Vishay Dale SI1308EDL-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI1308EDL-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI1308EDL-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1308EDL-T1-GE3 Features

  • 30V drain-source breakdown voltage.
  • 1.4A continuous drain current.
  • Low Rds On at 10V.
  • SC-70-3 surface mount package.
  • TrenchFET power MOSFET technology.

SI1308EDL-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Used in boost converter circuits.
  • Ideal for load switch applications.
  • Designed for smart phones and tablets.

SI1308EDL-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI1308EDL-T1-GE3?

The maximum drain-source voltage (Vds) is 30V.

What is the continuous drain current rating?

The continuous drain current (Id) is 1.4A at 25°C case temperature.

What is the Rds(on) at Vgs = 10V?

The Rds(on) is a maximum of 132mOhm at 1.4A and 10V Vgs.

What package type is the SI1308EDL-T1-GE3 supplied in?

It is supplied in an SC-70-3 (SOT-323) surface-mount package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Yes, this component is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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