SI4636DY-T1-GE3 The Vishay Dale SI4636DY-T1-GE3 is an N-Channel MOSFET designed for logic DC/DC applications. It offers a 30V drain-source voltage and a continuous drain current of 17A.
Mfr Part #:

SI4636DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4636DY-T1-GE3 is an N-Channel MOSFET designed for logic DC/DC applications. It offers a 30V drain-source voltage and a continuous drain current of 17A.
✓ Total Stock: 516,571 pcs
$ Price Range: $0.99

SI4636DY-T1-GE3 Available from 1 distributor

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SI4636DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4636DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4636DY-T1-GE3 is an N-Channel Power MOSFET featuring TrenchFET technology. It is rated for a 30V drain-source voltage and can handle a continuous drain current of up to 17A at 25°C case temperature.

 

This MOSFET exhibits a low on-state resistance of 8.5mOhm at 10A and 10V Vgs, and 10.5mOhm at 8A and 4.5V Vgs. It has a typical gate charge of 18.8nC at 10V Vgs. The device is designed for applications such as notebook logic DC/DC conversion.

 

Packaged in an 8-SOIC surface mount package, the SI4636DY-T1-GE3 operates within a temperature range of -55°C to 150°C. It has a maximum power dissipation of 4.4W at 25°C case temperature and 2.5W at 25°C ambient temperature.

SI4636DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30V 17A MOSFET
Subcategory: Single

SI4636DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4636DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4636DY-T1-GE3 Features

  • 30V drain-source breakdown voltage.
  • 17A continuous drain current.
  • Low Rds On of 8.5mOhm at 10A.
  • Surface mount 8-SOIC package.
  • Halogen-free construction available.

SI4636DY-T1-GE3 Applications

  • Notebook logic DC/DC.
  • Low side power switching.

SI4636DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4636DY-T1-GE3?

The maximum drain-source voltage is 30 V.

What is the continuous drain current of the SI4636DY-T1-GE3?

The continuous drain current is 17.0 A at 25°C case temperature.

What is the on-state resistance (Rds On) of the SI4636DY-T1-GE3?

The Rds On is a maximum of 0.0085 Ω at 10A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI4636DY-T1-GE3 supplied in?

It is supplied in an 8-SOIC package.

Is the SI4636DY-T1-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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