SI1406DH-T1-E3 The Vishay Dale SI1406DH-T1-E3 is an N-Channel MOSFET designed for load switching applications. It offers a 20V Drain-Source Voltage and a continuous drain current of 3.1A.
Mfr Part #:

SI1406DH-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1406DH-T1-E3 is an N-Channel MOSFET designed for load switching applications. It offers a 20V Drain-Source Voltage and a continuous drain current of 3.1A.
✓ Total Stock: 516,571 pcs
$ Price Range: $0.99

SI1406DH-T1-E3 Available from 1 distributor

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SI1406DH-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1406DH-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI1406DH-T1-E3 is an N-Channel MOSFET with a Drain-Source Voltage (Vds) of 20V. It is designed for applications such as load switching, PA switch, and level switching.

 

Key electrical characteristics include a maximum continuous drain current of 3.1A at 25°C ambient temperature and a maximum power dissipation of 1W at 25°C. The on-state resistance (Rds(on)) is specified at a maximum of 65mOhm at a drain current of 3.9A and gate-source voltage of 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA.

 

This MOSFET features a TrenchFET Power MOSFET design and operates within a temperature range of -55°C to 150°C. It is housed in a thermally enhanced SC-70 package, suitable for surface mounting.

 

The device is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

SI1406DH-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1406DH-T1-E3 N-Channel 20V MOSFET
Subcategory: N-Channel

SI1406DH-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1406DH-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1406DH-T1-E3 Features

  • N-Channel 20V MOSFET
  • 3.1A continuous drain current
  • Low Rds(on) of 65mOhm max
  • SC-70-6 surface mount package
  • Halogen-free and RoHS compliant

SI1406DH-T1-E3 Applications

  • Load switching applications
  • PA switch circuits
  • Level switch implementations
  • Battery-powered device load management
  • Portable electronics power switching

SI1406DH-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vds) for the SI1406DH-T1-E3?

The Drain-Source Voltage (Vds) for the SI1406DH-T1-E3 is 20V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 3.1A at 25°C ambient temperature.

What is the on-state resistance (Rds(on)) at typical operating conditions?

The on-state resistance is a maximum of 65mOhm at 3.9A drain current and 4.5V gate-source voltage.

What is the operating temperature range for the SI1406DH-T1-E3?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI1406DH-T1-E3 supplied in?

The SI1406DH-T1-E3 is supplied in an SC-70-6 package for surface mounting.

Is the SI1406DH-T1-E3 RoHS compliant?

Yes, the SI1406DH-T1-E3 is RoHS3 Compliant.

Does this MOSFET meet Halogen-free standards?

Yes, it is Halogen-free according to IEC 61249-2-21 Definition.

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