SIRA14DP-T1-GE3 The Vishay Dale SIRA14DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 58A continuous current rating. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SIRA14DP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIRA14DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 58A continuous current rating. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 508,324 pcs
$ Price Range: $0.99

SIRA14DP-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
337,210 pcs
337210 pcs On Request 1 On Request On Request 1330+ On Request On Request
Non-Authorised Inventory information
164,364 pcs
164364 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,750 pcs
6750 pcs On Request 1 On Request On Request On Request On Request On Request

SIRA14DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIRA14DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIRA14DP-T1-GE3 is an N-Channel MOSFET designed for high power density applications. It features a 30V drain-source voltage and a maximum continuous drain current of 58A at 25°C case temperature. The on-resistance is specified as a maximum of 5.1mOhm at 10A and 10V gate-source voltage.

 

This MOSFET utilizes TrenchFET® Gen IV technology and is 100% Rg and UIS tested. It has a gate charge of 29 nC typical at 10V and an input capacitance of 1450 pF maximum at 15V. The operating temperature range is from -55°C to 150°C.

 

The component is packaged in a PowerPAK® SO-8 surface-mount package. Its maximum power dissipation is 31.2W at 25°C case temperature and 3.6W at 25°C ambient temperature. Applications include high power density DC/DC conversion, synchronous rectification, and embedded DC/DC systems.

SIRA14DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIRA14DP-T1-GE3 N-Channel 30V 5.1mOhm MOSFET
Subcategory: N-Channel

SIRA14DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIRA14DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIRA14DP-T1-GE3 Features

  • 30V drain-source voltage rating.
  • 58A maximum continuous drain current.
  • Low 5.1mOhm on-resistance.
  • Surface mount PowerPAK SO-8 package.
  • TrenchFET® Gen IV power MOSFET technology.

SIRA14DP-T1-GE3 Applications

  • Used in power management circuits.
  • Suitable for DC-DC converters.
  • Ideal for load switching applications.
  • Can be used in battery protection circuits.
  • Applicable in motor control systems.

SIRA14DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SIRA14DP-T1-GE3?

30 V.

What package does the SIRA14DP-T1-GE3 come in?

PowerPAK® SO-8 surface mount package.

What is the operating temperature range?

-55°C to 150°C.

What is the typical on-resistance of the SIRA14DP-T1-GE3?

Maximum on-resistance is 5.1 mOhm at 10A and 10V gate-source voltage.

What is the gate threshold voltage?

Maximum gate threshold voltage is 2.2V at 250µA drain current.

What is the continuous drain current rating?

58A at case temperature 25°C.

What is the maximum power dissipation?

3.6W at ambient temperature 25°C and 31.2W at case temperature 25°C.

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