| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
337,210 pcs
|
337210 pcs | On Request | 1 | On Request | On Request | 1330+ | On Request | On Request | |
|
164,364 pcs
|
164364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,750 pcs
|
6750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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The Vishay Dale SIRA14DP-T1-GE3 is an N-Channel MOSFET designed for high power density applications. It features a 30V drain-source voltage and a maximum continuous drain current of 58A at 25°C case temperature. The on-resistance is specified as a maximum of 5.1mOhm at 10A and 10V gate-source voltage.
This MOSFET utilizes TrenchFET® Gen IV technology and is 100% Rg and UIS tested. It has a gate charge of 29 nC typical at 10V and an input capacitance of 1450 pF maximum at 15V. The operating temperature range is from -55°C to 150°C.
The component is packaged in a PowerPAK® SO-8 surface-mount package. Its maximum power dissipation is 31.2W at 25°C case temperature and 3.6W at 25°C ambient temperature. Applications include high power density DC/DC conversion, synchronous rectification, and embedded DC/DC systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
PowerPAK® SO-8 surface mount package.
-55°C to 150°C.
Maximum on-resistance is 5.1 mOhm at 10A and 10V gate-source voltage.
Maximum gate threshold voltage is 2.2V at 250µA drain current.
58A at case temperature 25°C.
3.6W at ambient temperature 25°C and 31.2W at case temperature 25°C.