| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500,000 pcs
|
500000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay Dale Si4618DY is a versatile dual N-channel MOSFET featuring an integrated Schottky diode. It is designed for applications requiring efficient power switching and voltage regulation.
This MOSFET boasts a 30V drain-source breakdown voltage and offers low on-state resistance (Rds(on)) values, with typical resistances of 0.017 Ω at VGS = 10V for Channel-1 and 0.010 Ω at VGS = 10V for Channel-2. Continuous drain current capabilities are rated up to 8.0A for Channel-1 and 15.2A for Channel-2 at TC = 25°C.
The device includes a Schottky diode with a forward voltage of 0.43V at 1.0A. It operates within a junction temperature range of -55°C to 150°C and is housed in a compact SO-8 surface-mount package, suitable for space-constrained designs.
Key features include TrenchFET technology for enhanced performance and 100% R_g and UIS tested for reliability. The Si4618DY is compliant with RoHS directives and is available in lead-free and halogen-free options.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V for both channels.
The typical gate threshold voltage is 1V, with a maximum of 2.5V.
For Channel-1, typical Rds(on) is 0.017 Ω at VGS = 10V. For Channel-2, it is 0.010 Ω at VGS = 10V.
At TC = 25°C, Channel-1 is rated for 8.0A and Channel-2 for 15.2A.
The operating junction and storage temperature range is -55°C to 150°C.
The Si4618DY is supplied in an SO-8 package.
Yes, the Si4618DY is RoHS3 Compliant.