SI2338DS The Vishay Dale SI2338DS is an N-Channel MOSFET designed for high-speed switching applications. It offers low on-resistance and a 30V drain-source voltage rating.
Mfr Part #:

SI2338DS

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2338DS is an N-Channel MOSFET designed for high-speed switching applications. It offers low on-resistance and a 30V drain-source voltage rating.
Total Stock: 1,130,000 pcs
$ Price Range: $2.81

SI2338DS Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,130,000 pcs
1130000 pcs On Request 1 On Request On Request On Request On Request On Request

SI2338DS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Lead Style
Mounting Type
Tape & Reel

SI2338DS Description

Short technical summary and product information.

The Vishay Dale SI2338DS is a TrenchFET® power MOSFET featuring N-Channel technology. It is rated for a 30V drain-source voltage and a continuous drain current of up to 6A at 25°C case temperature.

 

This MOSFET exhibits low on-resistance, with a maximum of 0.028 Ω at VGS = 10V and 0.033 Ω at VGS = 4.5V. The typical gate charge (Qg) is 4.2 nC.

 

Designed for applications such as DC/DC converters and high-speed switching, the SI2338DS comes in a compact SOT-23 package. It is suitable for surface mounting on standard FR4 boards.

 

The operating junction and storage temperature range is -55°C to +150°C. The device is RoHS and Halogen-free compliant.

SI2338DS Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30 V (D-S) MOSFET
Subcategory: N-Channel

SI2338DS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2338DS Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2338DS Features

  • N-Channel TrenchFET® power MOSFET.
  • Low on-resistance specified.
  • 30 V drain-source voltage rating.
  • Suitable for high-speed switching.
  • Compact SOT-23 package.

SI2338DS Applications

  • DC/DC converter high speed switching
  • Low on-resistance power MOSFET applications
  • Surface mount SOT-23 switching circuits
  • TrenchFET technology for efficient switching

SI2338DS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2338DS?

The maximum drain-source voltage is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 6 A at 25°C case temperature.

What is the on-resistance at VGS = 10V?

The maximum on-resistance at VGS = 10V is 0.028 Ω.

What is the typical gate charge?

The typical gate charge is 4.2 nC.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI2338DS in?

The SI2338DS is in a SOT-23 package.

Is the SI2338DS RoHS compliant?

Yes, the SI2338DS is RoHS3 Compliant.

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