| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The Vishay Siliconix SI1555DL-T1-GE3 is a complementary low-threshold MOSFET pair designed for various applications. It integrates an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 20V and a P-Channel MOSFET with a maximum VDS of -8V.
This MOSFET pair is housed in a compact SOT-363 (SC-70 6-LEADS) surface-mount package, making it suitable for space-constrained designs. The device operates within a junction temperature range of -55°C to 150°C and is RoHS and Halogen-free.
Key electrical characteristics include a Gate-Source Voltage (VGS) range of ±12V for N-Channel and ±8V for P-Channel. The typical On-Resistance (R DS(on)) varies with gate voltage, with values such as 0.385 Ω at VGS = 4.5V for N-Channel and 0.600 Ω at VGS = -4.5V for P-Channel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the N-Channel MOSFET is 20 V.
The maximum Drain-Source Voltage for the P-Channel MOSFET is -8 V.
The typical On-Resistance for the N-Channel MOSFET at VGS = 4.5 V is 0.385 Ω.
The typical On-Resistance for the P-Channel MOSFET at VGS = -4.5 V is 0.600 Ω.
The SI1555DL-T1-GE3 is in a SOT-363 package.
The SI1555DL-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
