| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,105 pcs
|
1105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
644 pcs
|
644 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The Vishay Siliconix SI2305DS-T1 is a P-Channel TrenchFET® Power MOSFET with a drain-source voltage rating of -8V. It offers low on-state resistance, with values as low as 0.052 Ω at a gate-source voltage of -4.5V and a drain current of -3.5A.
This MOSFET is suitable for various applications requiring efficient power switching. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W at 25°C ambient temperature.
The device comes in a compact TO-236 (SOT-23) surface-mount package, making it ideal for space-constrained designs. It is also available in lead-free and halogen-free options, catering to environmental compliance requirements.
Key electrical characteristics include a gate threshold voltage between -0.45V and -0.8V, and dynamic parameters such as total gate charge, input capacitance, output capacitance, and reverse transfer capacitance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-8 V
0.052 Ω
3.5 A
TO-236 (SOT-23)
RoHS3 Compliant
1 Unlimited
Yes