| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
328,727 pcs
|
328727 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay Dale Si2333DDS is a P-Channel TrenchFET Power MOSFET with a Drain-Source Voltage (VDS) of 12V. It offers low on-resistance (RDS(on)) values, with a maximum of 0.028 Ohm at VGS = -4.5V, making it suitable for efficient power switching.
This MOSFET is packaged in a TO-236 (SOT-23) surface-mount package, ideal for space-constrained applications. It is designed for use in smart phones and tablet PCs, specifically for load switch and battery switch functions.
Key electrical characteristics include a Gate-Source Voltage (VGS) of ±8V and a maximum continuous drain current (ID) of -6A at 25°C case temperature. The operating junction and storage temperature range is -55°C to 150°C.
The Si2333DDS is also available in a lead-free and halogen-free configuration, aligning with modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) is -12 V.
The typical On-Resistance (RDS(on)) at VGS = -4.5V is 0.028 Ohm.
The maximum continuous drain current at 25°C case temperature is -6 A.
The operating junction and storage temperature range is -55°C to 150°C.
The Si2333DDS is available in the TO-236 (SOT-23) package.
Yes, the Si2333DDS is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.