| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Siliconix SI4435BDY-T1-GE3 is a P-Channel Power MOSFET utilizing TrenchFET technology and an advanced high cell density process. It is designed for applications such as load switches and battery switches.
Key electrical specifications include a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. The continuous drain current (ID) is rated at -9.1A at TA = 25°C, with a pulsed drain current (IDM) of -50A. The on-state resistance (RDS(on)) is as low as 0.020 Ω at VGS = -10V and ID = -9.1A.
This MOSFET is housed in an SO-8 package. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The operating junction and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is -30 V.
The maximum continuous drain current (ID) at TA = 25°C is -9.1 A.
The typical RDS(on) at VGS = -10 V and ID = -9.1 A is 0.020 Ω.
The operating junction and storage temperature range is -55 to 150 °C.
It is supplied in an SO-8 package.
Yes, it is halogen-free according to IEC 61249-2-21 Definition.