| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI3911DV-T1-E3 from Vishay Dale is a dual P-Channel MOSFET array designed for surface mount applications. It offers a drain-to-source voltage (Vds) of 20V and a continuous drain current (Ids) of 1.8A. The Rds On is specified at a maximum of 145mOhm when measured at 2.2A and 4.5V Vgs, indicating efficient power handling.
This MOSFET array features a logic level gate, making it suitable for direct interface with low-voltage microcontrollers. The gate charge (Qg) is 7.5nC at 4.5V Vgs, and the gate threshold voltage (Vgs(th)) is a minimum of 450mV at 250µA. The component has a power dissipation rating of 830mW and operates within a temperature range of -55°C to 150°C.
Packaged in a 6-TSOP (SOT-23-6 Thin) case, the SI3911DV-T1-E3 is designed for surface mounting. It is supplied on tape and reel for automated assembly processes. The device is RoHS3 compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
1.8A.
145mOhm at Vgs=4.5V and Id=2.2A.
Minimum 450mV at 250µA drain current.
TSOT-23-6 surface mount package.
-55°C to 150°C junction temperature.
7.5nC at Vgs=4.5V.