| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI4405DY-T1-GE3 is a P-Channel MOSFET manufactured by Vishay Dale. It features a drain-source breakdown voltage of 30V and a continuous drain current of up to 10A at 25°C. The on-resistance is a low 6 mOhm typical at 10A and 4.5V gate-source voltage. The threshold voltage is typically -0.5V at 250µA.
This MOSFET is housed in a standard SO-8 package and is designed for surface mount applications. Its operating temperature range is from -55°C to 150°C. The source-drain diode forward voltage is typically 1.2V at 10A.
This component is suitable for various switching and amplification applications where a P-Channel MOSFET is required. Its specifications make it a reliable choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The typical on-resistance is 6 mOhm at 10A drain current and 4.5V gate-source voltage.
The continuous drain current is 10A at 25°C ambient temperature.
The operating temperature range is -55°C to 150°C.
The package type is SO-8.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
