| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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513 pcs
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513 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
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228 pcs
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228 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-29 00:15:11 | |
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1902CDL-T1-GE3 is a dual N-channel power MOSFET designed for load switch and DC/DC converter applications in portable devices. It offers a drain-source breakdown voltage of 20V and a continuous drain current of 1.1A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 235mΩ at 1A and 4.5V Vgs, and a typical gate charge (Qg) of 0.9nC. The MOSFET operates within a temperature range of -55°C to +150°C.
This component utilizes Vishay's TrenchFET power MOSFET technology, ensuring high performance and efficiency. It is packaged in a compact SC-70-6 (SOT-363) surface-mount package, making it suitable for space-constrained designs. The device is also 100% Rg tested for reliable performance.
Applications include load switching and DC/DC conversion, particularly where high-speed switching is required. The dual N-channel configuration provides flexibility in circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum continuous drain current is 1.1A at 25°C case temperature.
The typical on-resistance is 235mΩ at 1A drain current and 4.5V gate-source voltage.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in a SC-70-6 (SOT-363) package.
This MOSFET is suitable for load switch and DC/DC converter applications, especially for portable devices requiring high-speed switching.