| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11,000 pcs
|
11000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5441DC-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.9A at 25°C ambient temperature. The on-resistance (Rds On) is specified at a maximum of 55mOhm when driven at 3.9A and 4.5V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™ footprint, making it suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1.4V at 250µA and a maximum gate-source voltage (Vgs(max)) of ±12V. The gate charge (Qg) is 22 nC at 4.5V. The device has a maximum power dissipation of 1.3W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
3.9A at 25°C.
55mOhm at Vgs=4.5V and Id=3.9A.
1.4V max at Id=250µA.
-55°C to 150°C junction temperature.
1206-8 ChipFET™ surface-mount package.
22nC at Vgs=4.5V.