SI2393DS-T1-GE3 The Vishay Siliconix SI2393DS-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a maximum continuous drain current of 7.5A (Tc). It features a low Rds(on) of 22.7mOhm at 10V Vgs and is available in a surface-mount SOT-23 package.
Mfr Part #:

SI2393DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI2393DS-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a maximum continuous drain current of 7.5A (Tc). It features a low Rds(on) of 22.7mOhm at 10V Vgs and is available in a surface-mount SOT-23 package.
✓ Total Stock: 368,620 pcs
$ Price Range: $0.99

SI2393DS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
361,600 pcs
361600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request

SI2393DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2393DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SI2393DS-T1-GE3 is a P-Channel power MOSFET designed for various applications including load switching and circuit protection. It offers a drain-source breakdown voltage of -30V and a continuous drain current rating of up to 7.5A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 22.7mΩ at 10V Vgs and 4.5V drive voltage, and a typical gate charge (Qg) of 8.2 nC. The MOSFET operates within a junction temperature range of -55°C to +150°C.

 

This device is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, making it suitable for space-constrained designs. It is also tested 100% for Rg and UIS, and is available in lead (Pb)-free and halogen-free configurations.

SI2393DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SI2393DS-T1-GE3 P-Channel 30V MOSFET
Subcategory: Single

SI2393DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2393DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2393DS-T1-GE3 Features

  • P-Channel 30V power MOSFET
  • Low Rds(on) of 22.7mOhm at 10V Vgs
  • 7.5A continuous drain current (Tc)
  • Compact SOT-23 surface-mount package
  • Lead (Pb)-free and halogen-free

SI2393DS-T1-GE3 Applications

  • Ideal for load switching applications
  • Suitable for circuit protection circuits
  • Used in motor drive control systems

SI2393DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2393DS-T1-GE3?

The drain-source breakdown voltage is -30 V.

What is the maximum continuous drain current for the SI2393DS-T1-GE3?

The maximum continuous drain current is -7.5 A at 25°C case temperature and -6.1 A at 25°C ambient temperature.

What is the Rds(on) of the SI2393DS-T1-GE3 at 10V Vgs?

The Rds(on) is a maximum of 0.0227 Ω at 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package is the SI2393DS-T1-GE3 available in?

It is available in a SOT-23-3 (TO-236) package.

Is the SI2393DS-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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