| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,360 pcs
|
1360 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
737 pcs
|
737 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
454 pcs
|
454 pcs | On Request | 1 | On Request | On Request | 1202+ | On Request | On Request | |
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request | |
|
23 pcs
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23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2301BDS-T1-E3 is a P-Channel MOSFET belonging to the TrenchFET Power MOSFET family. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.2A at 25°C ambient temperature.
This MOSFET has a low on-state resistance (Rds(on)) of 100mOhm at a gate-source voltage (Vgs) of -4.5V and a drain current (Id) of 2.8A. The gate threshold voltage (Vgs(th)) is typically -0.45V and has a maximum of -0.95V at 250µA. The operating temperature range is from -55°C to 150°C.
Packaged in a TO-236-3, SC-59, SOT-23-3 surface-mount package, the SI2301BDS-T1-E3 is suitable for various electronic designs. It has a maximum power dissipation of 700mW at 25°C ambient temperature.
Key electrical characteristics include a gate-source voltage (Vgs) range of ±8V and an input capacitance (Ciss) of 375pF at 6V. The gate charge (Qg) is a maximum of 10nC at 4.5V. This device is RoHS3 compliant and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V.
The typical gate threshold voltage is -0.45V at a drain current of 250µA.
The maximum continuous drain current is 2.2A at 25°C ambient temperature.
The Rds(on) is 100mOhm at a drain current of 2.8A and a gate-source voltage of -4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a TO-236-3, SC-59, SOT-23-3 surface mount package.
Yes, it is RoHS3 compliant.