SI1499DH-T1-GE3 The Vishay Dale SI1499DH-T1-GE3 is a P-Channel MOSFET designed for load switching in portable devices. It offers a low on-resistance and guaranteed operation at 1.2V.
Mfr Part #:

SI1499DH-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1499DH-T1-GE3 is a P-Channel MOSFET designed for load switching in portable devices. It offers a low on-resistance and guaranteed operation at 1.2V.
✓ Total Stock: 371,000 pcs
$ Price Range: $0.99

SI1499DH-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
301,000 pcs
301000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
70,000 pcs
70000 pcs On Request 1 On Request On Request On Request On Request On Request

SI1499DH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1499DH-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1499DH-T1-GE3 is a P-Channel MOSFET with a Drain-Source Voltage (Vds) of 8V and a Continuous Drain Current (Id) of 1.6A. It features an ultra-low on-resistance, with a maximum of 78mOhm at 2A and 4.5V Vgs, making it suitable for applications requiring efficient power switching.

 

This MOSFET is designed for load switch applications in portable devices, with guaranteed operation at Vgs = 1.2V. This critical feature contributes to optimized design and extended battery life. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in a compact SC-70-6 (SOT-363) surface-mount package, the SI1499DH-T1-GE3 is ideal for space-constrained designs. Its technology is MOSFET (Metal Oxide), and it is classified as a P-Channel FET type.

SI1499DH-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1499DH-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI1499DH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1499DH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1499DH-T1-GE3 Features

  • P-Channel MOSFET with 8V drain-source voltage.
  • Low on-resistance of 78mOhm at 2A, 4.5V.
  • Guaranteed operation at 1.2V Vgs.
  • Compact SC-70-6 surface-mount package.
  • Wide operating temperature range of -55°C to 150°C.

SI1499DH-T1-GE3 Applications

  • Load switching in portable electronics.
  • Battery management and protection circuits.
  • DC-DC converter and power management systems.
  • Low-voltage general-purpose switching applications.

SI1499DH-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI1499DH-T1-GE3?

The maximum drain-source voltage (Vds) for the SI1499DH-T1-GE3 is 8V.

What is the maximum continuous drain current of the SI1499DH-T1-GE3?

The SI1499DH-T1-GE3 has a maximum continuous drain current of 1.6A at 25°C case temperature.

What is the maximum on-resistance (Rds On) for this P-Channel MOSFET?

The maximum on-resistance for the SI1499DH-T1-GE3 is 78mOhm when measured at 2A drain current and 4.5V gate-source voltage.

What is the operating temperature range for the SI1499DH-T1-GE3?

The SI1499DH-T1-GE3 can operate between -55°C and 150°C.

What package type is the SI1499DH-T1-GE3 supplied in?

The SI1499DH-T1-GE3 is supplied in a SC-70-6 (SOT-363) surface-mount package.

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