SI2307BDS-T1-E3 The Vishay Dale SI2307BDS-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage and 2.5A continuous drain current. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2307BDS-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2307BDS-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage and 2.5A continuous drain current. It is supplied in a SOT-23-3 package.
✓ Total Stock: 368,931 pcs
$ Price Range: $0.99

SI2307BDS-T1-E3 Available from 4 distributors

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SI2307BDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2307BDS-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI2307BDS-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.5A at an ambient temperature (Ta).

 

The MOSFET features a low on-resistance (Rds On) of 78mOhm maximum at 3.2A and 10V gate-source voltage (Vgs). Key electrical parameters include a gate threshold voltage (Vgs(th)) of 3V maximum at 250µA and an input capacitance (Ciss) of 380pF maximum at 15V.

 

With a maximum power dissipation of 750mW (Ta) and an operating temperature range of -55°C to 150°C (TJ), this component is suitable for demanding environments. It is packaged in a compact SOT-23-3 (TO-236) surface-mount case, making it ideal for space-constrained designs.

 

The SI2307BDS-T1-E3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI2307BDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2307BDS-T1-E3 P-Channel MOSFET
Subcategory: Single

SI2307BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2307BDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2307BDS-T1-E3 Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 2.5A.
  • Low on-resistance of 78mOhm maximum.
  • Surface mount SOT-23-3 package.
  • RoHS3 compliant with MSL 1.

SI2307BDS-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for battery management circuits.
  • Used in low-voltage power supplies.
  • Applicable in portable electronic devices.

SI2307BDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2307BDS-T1-E3?

The maximum drain-source voltage (Vdss) for the SI2307BDS-T1-E3 is 30V.

What is the continuous drain current rating?

The continuous drain current (Id) is rated at 2.5A.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 78mOhm when measured at 3.2A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is from -55°C to 150°C.

What package type is the SI2307BDS-T1-E3 supplied in?

It is supplied in a SOT-23-3 (TO-236) package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, the RoHS status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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