| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,726 pcs
|
5726 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4563DY-T1-E3 from Vishay Dale is a versatile N/P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of 8A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 16mOhm at 5A and 10V, ensuring efficient power transfer.
With a gate threshold voltage (Vgs(th)) of 2V at 250µA and a gate charge (Qg) of 85nC at 10V, this device offers controlled switching characteristics. The input capacitance (Ciss) is rated at 2390pF at 20V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 3.25W.
This component is housed in an 8-SOIC package, suitable for surface mounting. Its configuration as both N-Channel and P-Channel makes it adaptable for complementary or push-pull applications. The TrenchFET® series technology ensures high performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
8A at 25°C.
16mOhm maximum at 5A and 10V.
-55°C to 150°C.
8-SOIC (0.154", 3.90mm Width) surface mount.
85nC maximum at 10V.
N and P-Channel.