| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
376,667 pcs
|
376667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18,520 pcs
|
18520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
964 pcs
|
964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay SI4896DY-T1-E3 is an N-Channel MOSFET designed for power applications. It features a maximum Drain-Source Voltage of 80V and a continuous drain current of 6.7A at 25°C ambient temperature.
This MOSFET offers a low on-state resistance of 16.5mOhm at a gate-source voltage of 10V and a drain current of 10A. The gate charge is typically 34nC at 10V. It operates within a temperature range of -55°C to 150°C.
The device is housed in an 8-SOIC package, suitable for surface mounting. Its technology is based on MOSFET (Metal Oxide) principles, offering efficient switching capabilities. The part is compliant with RoHS3 standards and is halogen-free.
Key electrical characteristics include a gate-source voltage rating of ±20V and a gate threshold voltage of 2V at 250µA. The maximum power dissipation is rated at 1.56W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 80V.
The continuous drain current is 6.7A at 25°C ambient temperature.
The Rds(on) is a maximum of 16.5mOhm at 10A and 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in an 8-SOIC package.
Yes, the SI4896DY-T1-E3 is RoHS3 compliant.
Yes, this MOSFET is halogen-free.