| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
334,020 pcs
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334020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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45,000 pcs
|
45000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
3,101 pcs
|
3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2369DS-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 7.6A at a case temperature of 25°C. The on-resistance (Rds(on)) is as low as 29mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 5.4A.
This MOSFET is constructed using TrenchFET technology and is rated for a continuous power dissipation of 2.5W at 25°C case temperature and 1.25W at 25°C ambient temperature. The operating junction and storage temperature range is from -55°C to +150°C.
The device is packaged in a SOT-23-3 (TO-236-3, SC-59) surface-mount package. Its key applications include load switching, notebook adaptor switching, and DC/DC converters in mobile computing.
Key electrical parameters include a gate charge (Qg) of 36nC at 10V Vgs and an input capacitance (Ciss) of 1295pF at 15V Vds. The gate-source voltage range is ±20V, and the gate-source threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is -30 V.
The continuous drain current is -7.6 A at Tc=25 °C and -5.4 A at Ta=25 °C.
The gate-source voltage rating is ±20 V.
It is packaged in SOT-23-3 (also known as TO-236-3 or SC-59).
The operating junction temperature range is -55 °C to 150 °C.
Maximum power dissipation is 2.5 W at Tc=25 °C and 1.25 W at Ta=25 °C.
The maximum on-resistance is 29 mOhm at Vgs=10 V and Id=5.4 A.