Parts from this manufacturer
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Compare stocked parts across distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | |
|---|---|---|---|
On Semiconductor
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2,000,000
|
Price on request
2,000,000
|
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On Semiconductor
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2,000,000
|
Price on request
2,000,000
|
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On Semiconductor
|
2,000,000
|
Price on request
2,000,000
|
|
On Semiconductor
|
2,000,000
|
Price on request
2,000,000
|
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On Semiconductor
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2,000,000
|
Price on request
2,000,000
|
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On Semiconductor
|
1,984,381
|
Price on request
1,984,381
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On Semiconductor
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1,980,008
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Price on request
1,980,008
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On Semiconductor
<p>The 1N914BWS is a general purpose silicon rectifier diode from On Semiconductor, designed for small signal switching and rectification applications. It is rated for a maximum reverse voltage of 75V and an average rectified current of 150mA.</p><p> </p><p>Key electrical characteristics include a forward voltage of 1V at 100mA, a reverse recovery time of 4ns, and a junction capacitance of 4pF at 0V, 1MHz. The diode operates with a maximum junction temperature of 150°C and uses standard silicon technology.</p><p> </p><p>This component is offered in a surface mount package, specifically the SC-90 and SOD-323F (supplier device package SOD-323F). It is suitable for automated assembly and compact circuit designs.</p><p> </p><p>Typical applications include small signal rectification, high-speed switching, and protection circuits in consumer electronics, telecommunications, and industrial control systems.</p>
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1,971,948
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Price on request
1,971,948
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On Semiconductor
|
1,968,000
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Price on request
1,968,000
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On Semiconductor
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1,954,500
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Price on request
1,954,500
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On Semiconductor
<p>The 1N4148TR is a small signal switching diode manufactured by On Semiconductor. It is designed for general purpose high-speed switching applications. With a maximum repetitive reverse voltage of 100V and an average rectified forward current of 200mA, it handles moderate power levels in compact designs. The diode features a low forward voltage of 1V at 10mA and a fast reverse recovery time of 4ns, making it suitable for high-frequency switching circuits. The junction capacitance is 4pF at 0V and 1MHz, minimizing signal distortion. The device can operate over a junction temperature range of -55°C to +175°C and has a power dissipation of 500mW. It is packaged in a through-hole DO-35 (DO-204AH) axial lead package, compatible with standard PCB mounting. The 1N4148TR is available in tape and reel packaging for automated assembly.</p>
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1,943,048
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Price on request
1,943,048
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On Semiconductor
|
1,940,992
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Price on request
1,940,992
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On Semiconductor
|
1,934,060
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Price on request
1,934,060
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On Semiconductor
|
1,923,831
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Price on request
1,923,831
|
|
On Semiconductor
|
1,903,158
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Price on request
1,903,158
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On Semiconductor
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1,902,416
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Price on request
1,902,416
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On Semiconductor
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1,894,862
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Price on request
1,894,862
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On Semiconductor
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1,884,225
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Price on request
1,884,225
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On Semiconductor
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1,880,717
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Price on request
1,880,717
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On Semiconductor
|
1,835,138
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Price on request
1,835,138
|
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On Semiconductor
|
1,825,865
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Price on request
1,825,865
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On Semiconductor
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1,806,794
|
Price on request
1,806,794
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On Semiconductor
<p>The 1N4148TA is a small signal switching diode manufactured by onsemi, designed for general purpose and high-speed switching applications. This device features a maximum repetitive reverse voltage of 100V and an average rectified forward current of 200mA, with a peak forward surge current capability of 1A for 1 second. The diode offers a fast reverse recovery time of 4ns, making it suitable for high-frequency circuits.</p><p> </p><p>The forward voltage is typically 1V at 10mA forward current, and reverse leakage current is only 0.025µA at 20V reverse voltage. This diode operates over a junction temperature range of -55°C to +175°C, and can be stored from -65°C to +200°C. Power dissipation is rated at 500mW.</p><p> </p><p>The 1N4148TA is packaged in a DO-204AH (DO-35) through-hole package, supplied in ammo packing. This part is RoHS3 compliant and has a moisture sensitivity level (MSL) of 1 (unlimited). It is commonly used in signal processing, protection circuits, and low-current rectification.</p>
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1,800,375
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Price on request
1,800,375
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On Semiconductor
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1,758,363
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Price on request
1,758,363
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On Semiconductor
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1,757,257
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Price on request
1,757,257
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On Semiconductor
|
1,756,979
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Price on request
1,756,979
|
|
On Semiconductor
|
1,756,660
|
Price on request
1,756,660
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On Semiconductor
|
1,729,000
|
Price on request
1,729,000
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|
On Semiconductor
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1,710,040
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Price on request
1,710,040
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On Semiconductor
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1,709,600
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Price on request
1,709,600
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On Semiconductor
|
1,704,600
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Price on request
1,704,600
|
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On Semiconductor
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1,704,000
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Price on request
1,704,000
|
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On Semiconductor
|
1,700,000
|
Price on request
1,700,000
|
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On Semiconductor
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1,693,140
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Price on request
1,693,140
|
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On Semiconductor
|
1,680,000
|
Price on request
1,680,000
|
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On Semiconductor
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1,669,500
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Price on request
1,669,500
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On Semiconductor
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1,667,205
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Price on request
1,667,205
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On Semiconductor
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1,657,374
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Price on request
1,657,374
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On Semiconductor
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1,649,341
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Price on request
1,649,341
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On Semiconductor
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1,646,430
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Price on request
1,646,430
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On Semiconductor
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1,644,574
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Price on request
1,644,574
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On Semiconductor
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1,643,636
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Price on request
1,643,636
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On Semiconductor
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1,640,240
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Price on request
1,640,240
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On Semiconductor
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1,638,445
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Price on request
1,638,445
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On Semiconductor
<p>The 1N4148 is a fast switching diode designed for high-speed switching applications. It features a maximum DC reverse voltage of 100V and an average rectified current of 150mA. The forward voltage is typically 1V at 10mA, and the reverse recovery time is 4ns, making it suitable for high-frequency circuits.</p><p> </p><p>The diode is housed in a DO-35 axial leaded package, which is through-hole mountable. It has a junction capacitance of 4pF at 0V and 1MHz, and can operate over a junction temperature range of -65°C to 175°C. The device is Pb-Free as per the datasheet.</p><p> </p><p>Typical applications include general purpose switching, signal rectification, and clamping circuits. The small signal rating (≤200mA) makes it ideal for low-power designs where fast switching is required.</p>
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1,632,884
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Price on request
1,632,884
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On Semiconductor
|
1,632,833
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Price on request
1,632,833
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On Semiconductor
|
1,625,000
|
Price on request
1,625,000
|
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On Semiconductor
|
1,621,239
|
Price on request
1,621,239
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On Semiconductor
|
1,608,750
|
Price on request
1,608,750
|
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On Semiconductor
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1,608,000
|
Price on request
1,608,000
|