| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22,000 pcs
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22000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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| Halogen Free | |
| Industrial Grade | |
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| Military Grade | |
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The NCV57091ADWR2G from On Semiconductor is a high-current, single-channel IGBT/MOSFET gate driver designed for high power applications requiring efficiency and reliability. It features 5 kVrms internal galvanic isolation, ensuring robust system performance.
This gate driver accommodates a wide range of input bias voltages and signal levels from 3.3 V to 20 V. Key electrical specifications include a high peak output current of +/-6.5 A, short propagation delays with accurate matching, and IGBT/MOSFET gate clamping during short circuits. It also provides an active pull-down feature for the gate.
The NCV57091ADWR2G is available in a wide-body SOIC-8 package, suitable for surface mount applications. Its operating temperature range is -40°C to 125°C, making it suitable for demanding environments. Typical applications include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV57091ADWR2G has a peak output current of +/-6.5 A.
The NCV57091ADWR2G provides 5 kVrms of internal galvanic isolation.
The NCV57091ADWR2G operates from -40°C to 125°C.
This gate driver is available in an 8-SOIC package suitable for surface mounting.
Typical applications include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters.