| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCV57090ADWR2G from On Semiconductor is a single-channel, isolated IGBT/MOSFET gate driver. It provides high peak output current of +6.5 A/−6.5 A and features 5 kVrms internal galvanic isolation, enhancing system efficiency and reliability in high power applications.
This gate driver is designed to accommodate a wide range of input bias voltage and signal levels from 3.3 V to 20 V. It is available in a wide-body SOIC-8 package, suitable for surface mount applications. Key features include low clamp voltage drop, short propagation delays with accurate matching, and IGBT/MOSFET gate clamping during short circuit events.
Typical applications for the NCV57090ADWR2G include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters. Its robust design ensures high transient and electromagnetic immunity.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV57090ADWR2G offers a high peak output current of +6.5 A/−6.5 A.
This gate driver provides 5 kVrms internal galvanic isolation.
The operating temperature range is -40°C to 125°C.
The NCV57090ADWR2G is supplied in an 8-SOIC package.
The mounting type is Surface Mount.
The device accommodates logic input voltages from 3.3 V to 20 V.