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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCV57091CDWR2G from On Semiconductor is a high-current, single-channel IGBT/MOSFET gate driver featuring 5 kVrms internal galvanic isolation. Designed for high system efficiency and reliability, it operates across a wide input bias voltage and signal level range from 3.3 V to 20 V.
Key electrical specifications include a high peak output current of +6.5 A/−6.5 A, short propagation delays with accurate matching, and IGBT/MOSFET gate clamping during short circuits. The device supports a wide bias voltage range and offers tight UVLO thresholds for bias flexibility. It is built on capacitive coupling technology.
This gate driver is suitable for demanding applications such as motor control, uninterruptible power supplies (UPS), automotive power systems, industrial power supplies, and solar inverters. It is housed in a compact 8-pin SOIC wide-body package, designed for surface mount.
Environmental compliance includes RoHS3 compliance, MSL 1 rating, and REACH unaffected status. The device is also Pb-Free and Halogen Free/BFR Free.
| Qty | Low | High |
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| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV57091CDWR2G offers a high peak output current of +6.5 A/−6.5 A.
This gate driver provides 5 kVrms of internal galvanic isolation.
The operating temperature range is from -40°C to 125°C.
The NCV57091CDWR2G is supplied in an 8-pin SOIC (0.295", 7.50mm Width) package for surface mounting.
Yes, the NCV57091CDWR2G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.