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NCD57091BDWR2G The ON Semiconductor NCD57091BDWR2G is an isolated high current IGBT/MOSFET gate driver. It offers 6.5A peak output current and 5kVrms galvanic isolation.
Mfr Part #:

NCD57091BDWR2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NCD57091BDWR2G is an isolated high current IGBT/MOSFET gate driver. It offers 6.5A peak output current and 5kVrms galvanic isolation.
✓ Total Stock: 22,876 pcs
$ Price Range: $2.62

NCD57091BDWR2G Available from 1 distributor

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✓ Non-Authorised
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22,876 pcs
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NCD57091BDWR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Common Mode Transient Immunity (Min)
Current
Lead Spacing
Mounting Type
Number of Channels
Operating Temperature
Output Current
Propagation Delay tpLH
Pulse Width Distortion (Max)
Rise
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Voltage
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NCD57091BDWR2G Description

Short technical summary and product information.

The ON Semiconductor NCD57091BDWR2G is a single-channel, isolated IGBT/MOSFET gate driver designed for high-power applications. It provides 5 kVrms internal galvanic isolation, enhancing system efficiency and reliability.

 

Key electrical specifications include a high peak output current of +6.5 A/−6.5 A, short propagation delays, and accurate matching. The device supports a wide input bias voltage range from 3.3 V to 20 V and operates within a temperature range of -40°C to 125°C.

 

This gate driver is available in a compact 8-SOIC wide-body package, suitable for surface mount applications. Its design accommodates various input signal levels and offers features like active Miller clamp and gate clamping during short circuits, making it versatile for motor control, uninterruptible power supplies, and industrial power applications.

 

The NCD57091BDWR2G is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

NCD57091BDWR2G Quick Information

Product Type: Gate Driver
Canonical Name: NCD57091BDWR2G Isolated High Current IGBT/MOSFET Gate Driver
Subcategory: Isolated Gate Driver

NCD57091BDWR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NCD57091BDWR2G Estimated Pricing

Qty Low High
1+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCD57091BDWR2G Features

  • High peak output current of ±6.5 A.
  • 5 kVrms internal galvanic isolation.
  • Wide input bias voltage range.
  • Operates from -40°C to 125°C.
  • Surface mount 8-SOIC package.

NCD57091BDWR2G Applications

  • Suitable for motor control applications.
  • Used in uninterruptible power supplies.
  • Ideal for industrial power supplies.
  • Applicable in automotive systems.

NCD57091BDWR2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the peak output current for the NCD57091BDWR2G?

The NCD57091BDWR2G offers a peak output current of +6.5 A and -6.5 A.

What is the isolation voltage of the NCD57091BDWR2G?

The NCD57091BDWR2G provides 5 kVrms internal galvanic isolation.

What is the operating temperature range for this gate driver?

The operating temperature range for the NCD57091BDWR2G is -40°C to 125°C.

What package type is the NCD57091BDWR2G supplied in?

The NCD57091BDWR2G is supplied in an 8-SOIC package.

Is the NCD57091BDWR2G RoHS compliant?

Yes, the NCD57091BDWR2G is RoHS3 Compliant.

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