NCV57090DDWR2G The On Semiconductor NCV57090DDWR2G is a single-channel, isolated IGBT/MOSFET gate driver. It offers high peak output current and 5 kVrms galvanic isolation, suitable for high-power applications.
Mfr Part #:

NCV57090DDWR2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NCV57090DDWR2G is a single-channel, isolated IGBT/MOSFET gate driver. It offers high peak output current and 5 kVrms galvanic isolation, suitable for high-power applications.
Total Stock: 24,000 pcs
$ Price Range: $2.62

NCV57090DDWR2G Available from 1 distributor

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NCV57090DDWR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Common Mode Transient Immunity (Min)
Current
Halogen Free
Lead Spacing
Mounting Type
Number of Channels
Operating Temperature
Propagation Delay tpLH
Pulse Width Distortion (Max)
Rise
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Voltage

NCV57090DDWR2G Description

Short technical summary and product information.

The NCV57090DDWR2G from On Semiconductor is a high-current, single-channel IGBT/MOSFET gate driver featuring 5 kVrms internal galvanic isolation. Designed for high system efficiency and reliability in demanding power applications, this device accepts complementary inputs and provides options for active Miller clamp and separate high and low driver outputs.

 

Key electrical specifications include a high peak output current of +6.5 A/−6.5 A, short propagation delays with accurate matching, and IGBT/MOSFET gate clamping during short circuits. It supports a wide range of input bias voltage and signal levels from 3.3 V to 20 V, with tight UVLO thresholds for bias flexibility. The driver also boasts high transient and electromagnetic immunity.

 

This gate driver is available in a wide-body SOIC-8 package and is suitable for surface mount applications. Its typical applications include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

It operates within a temperature range of -40°C to 125°C and supports a voltage range of 0V to 32V. The technology utilized is capacitive coupling, ensuring robust isolation.

NCV57090DDWR2G Quick Information

Product Type: Gate Driver
Canonical Name: NCV57090DDWR2G Isolated High Current IGBT/MOSFET Gate Driver
Subcategory: Isolators - Gate Drivers

NCV57090DDWR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NCV57090DDWR2G Estimated Pricing

Qty Low High
1+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCV57090DDWR2G Features

  • High peak output current of +/-6.5A.
  • 5 kVrms internal galvanic isolation.
  • Suitable for high power applications.
  • Wide input bias voltage range.
  • Pb-Free and Halogen Free.

NCV57090DDWR2G Applications

  • Used in motor control systems.
  • Suitable for uninterruptible power supplies.
  • Applied in automotive power systems.
  • Designed for industrial power supplies.
  • Utilized in solar inverters.

NCV57090DDWR2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the NCV57090DDWR2G?

The device operates within a voltage range of 0V to 32V.

What package does the NCV57090DDWR2G come in?

It comes in an 8-SOIC (0.295 inch, 7.50mm width) surface mount package.

What is the maximum output current of the NCV57090DDWR2G?

The maximum output current is 6.5A.

What is the operating temperature range for this device?

The device operates from -40°C to 125°C.

Is the NCV57090DDWR2G RoHS compliant?

Yes, it is RoHS3 compliant.

Does the device provide galvanic isolation?

Yes, it provides galvanic isolation of 5kVrms.

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