NCD57253DWR2G

The NCD57253DWR2G from On Semiconductor is a high-current, two-channel isolated IGBT/MOSFET gate driver. It provides 2.5 or 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts a wide range of bias voltages, from 3.3 V to 20 V on the input side and up to 32 V on the output side.

Key electrical features include high peak output currents of ±6.5 A and ±3.5 A, configurable as dual low-side, dual high-side, or half-bridge drivers. It supports programmable overlap or dead-time control and features a disable pin for power sequencing. The driver boasts short propagation delays with accurate matching, tight UVLO thresholds, and high common-mode transient immunity (CMTI) of 100 kV/µs.

This gate driver is available in a 16-SOIC package with a surface mount type. It operates within a temperature range of -40°C to 125°C. The technology employed is capacitive coupling, ensuring reliable signal transfer.

Typical applications for the NCD57253DWR2G include EV chargers, motor control, uninterruptible power supplies (UPS), industrial power supplies, and solar inverters. The NCV variant is suitable for automotive applications requiring AEC-Q100 qualification.