On Semiconductor

<p>The ESD9X3.3ST5G is a unidirectional Zener TVS diode from On Semiconductor designed for ESD protection of voltage-sensitive components. It is suitable for general purpose applications and commonly used in portable electronics such as cellular phones, MP3 players, and digital cameras where board space is at a premium.</p><p>&nbsp;</p><p>Electrical characteristics include a reverse standoff voltage of 3.3V, minimum breakdown voltage of 5V at 1mA, and typical clamping voltage of 10.4V at a peak pulse current of 9.8A (8/20µs). Peak pulse power is 102W. The device offers ultra-low leakage and fast response time typically below 1ns. Capacitance is 80pF at 1MHz. ESD protection ratings meet IEC 61000-4-2 Level 4 with ±30kV contact and air discharge, and Human Body Model rating of 16kV. The device operates over a junction temperature range of -55°C to +150°C with a maximum power dissipation of 150mW on FR-5 board.</p><p>&nbsp;</p><p>Packaged in the ultra-small SOD-923 case (1.0mm x 0.60mm x 0.43mm height), it is surface mountable and supplied in tape and reel with a standard quantity of 8000 pieces. The device is Pb-free, RoHS3 compliant, REACH unaffected, and MSL 1 – unlimited. The epoxy body meets UL 94 V-0 flammability rating.</p>

<p>The BZX84C15LT1G is a 15V Zener diode from onsemi's BZX84CxxxLT1G series, designed for voltage regulation in space-constrained applications. It is rated for a maximum power dissipation of 250mW on FR-4 or FR-5 boards.</p><p>&nbsp;</p><p>Key electrical characteristics include a nominal Zener voltage of 15V with ±6% tolerance, a maximum forward voltage of 900mV at 10mA, and a maximum reverse leakage current of 50nA at 10.5V. The device features a maximum Zener impedance of 30Ω and an operating temperature range of -65°C to 150°C.</p><p>&nbsp;</p><p>The diode is housed in a void-free, transfer-molded thermosetting plastic SOT-23-3 (TO-236) package suitable for surface mount assembly. It has an ESD rating of Class 3 (&gt;16 kV) per the Human Body Model and is supplied in tape and reel packaging with 3,000 units per reel.</p>

<p>The ESDONCAN1LT3G from On Semiconductor is a dual bidirectional TVS diode designed to protect CAN transceivers from ESD and other transient voltage events. It provides protection for two data lines in a single compact SOT-23-3 package.</p><p>&nbsp;</p><p>With a reverse standoff voltage of 24V and a breakdown voltage range of 26.2V to 32V, this device clamps transient voltages to safe levels. It features a peak pulse current rating of 3A (8/20 µs) and peak power dissipation of 150W. Capacitance is only 10pF at 1MHz, making it suitable for high-speed CAN and CAN-FD buses. ESD protection meets IEC 61000-4-2 Level 4 with contact discharge rating of 23kV.</p><p>&nbsp;</p><p>The device is housed in a surface-mount SOT-23-3 (TO-236) package, rated for operation from -55°C to 150°C. It is RoHS3 compliant, Pb-Free, and meets UL 94 V-0 flammability rating. This part is suitable for industrial and automotive applications including DeviceNet and low/high-speed CAN networks.</p>

<p>The BAS21SLT1G is a dual series high-voltage switching diode from On Semiconductor, designed for general-purpose switching applications requiring high reverse voltage capability. It features two diodes connected in series within a single SOT-23 surface-mount package.</p><p>&nbsp;</p><p>Key electrical characteristics include a maximum continuous reverse voltage of 250V, a peak forward current of 225mA, and a fast reverse recovery time of 50ns (tested at IF=30mA, IR=30mA, RL=100Ω). The forward voltage is typically 1.0V at 100mA and 1.25V at 200mA. Reverse leakage current is limited to 0.1µA at 200V and 100µA at 200V and 150°C junction temperature.</p><p>&nbsp;</p><p>The device is housed in a Pb-free, halogen-free/BFR-free SOT-23 (TO-236) package and is RoHS compliant. It is rated for operation from -55°C to 150°C junction temperature. Power dissipation is 225mW on FR-5 board and 300mW on alumina substrate. The BAS21SLT1G is supplied in tape and reel packaging with 3000 pieces per reel.</p>