| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,970 pcs
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4970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The NCV57081BDR2G from On Semiconductor is a high-current, single-channel IGBT/MOSFET gate driver featuring 3.75 kVrms internal galvanic isolation. Designed for high system efficiency and reliability, it is suitable for high-power applications.
This gate driver accommodates a wide range of input bias voltages and signal levels from 3.3 V to 20 V. It provides a high peak output current of +6.5 A/−6.5 A and features short propagation delays with accurate matching. The device is designed for IGBT/MOSFET gate clamping during short circuits and offers an active pull-down function.
Available in a narrow-body SOIC-8 package, the NCV57081BDR2G is surface-mount compatible. It operates within a temperature range of -40°C to 125°C. The driver is Pb-free, Halogen Free/BFR Free, and RoHS compliant.
Typical applications include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, solar inverters, and HVAC systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum output current is 6.5A.
The common mode transient immunity is 100kV/µs.
The typical propagation delay is 90ns.
The input voltage range is 3.3V to 20V.
It is packaged in an 8-SOIC surface mount package.
Yes, it is RoHS3 compliant.